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NE85633-T1B-A

  •  NE85633-T1B-A
  • image of 双极射频晶体管 NE85633-T1B-A
NE85633-T1B-A
双极射频晶体管
CEL (California Eastern Laboratories)
SAME AS 2SC3356
-
卷带式 (TR)
27100
1
: 27100

3000

$1.8000

$5,400.0000

9000

$1.4000

$12,600.0000

15000

$1.2000

$18,000.0000

获取报价信息
NE856
CEL
NPN SILICON HIGH FREQUENCY TRANSISTOR
NE856M03
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE856M23
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE856M13
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE856M02
瑞萨-Renesas
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
NE85618
CEL
NONLINEAR MODEL
产品参数
PDF(1)
类型描述
制造商CEL (California Eastern Laboratories)
系列-
包装卷带式 (TR)
产品状态OBSOLETE
包装/箱TO-236-3, SC-59, SOT-23-3
安装类型Surface Mount
晶体管类型NPN
工作温度150°C (TJ)
获得11.5dB
功率 - 最大200mW
集电极电流 (Ic)(最大)100mA
电压 - 集电极发射极击穿(最大)12V
直流电流增益 (hFE)(最小值)@ Ic、Vce50 @ 20mA, 10V
频率-转变7GHz
噪声系数(dB Typ @ f)1.1dB @ 1GHz
供应商设备包3-MINIMOLD
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