TPH3206LDG-TR Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Product parameters

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TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tray
Product Status	OBSOLETE
Package / Case	3-PowerDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 8V
Power Dissipation (Max)	96W (Tc)
Vgs(th) (Max) @ Id	2.6V @ 500µA
Supplier Device Package	3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	8V
Vgs (Max)	±18V
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 480 V

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