TP90H050WS Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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$17.2900

$13.9900

$419.7000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tube
Product Status	OBSOLETE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C
Technology	GaNFET (Cascode Gallium Nitride FET)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Rds On (Max) @ Id, Vgs	63mOhm @ 22A, 10V
Power Dissipation (Max)	119W (Tc)
Vgs(th) (Max) @ Id	4.4V @ 700µA
Supplier Device Package	TO-247-3
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	900 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	980 pF @ 600 V

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