SCT055W65G3-4AG Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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600

$8.8600

$5,316.0000

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Product parameters

TYPE	DESCRIPTION
Mfr	STMicroelectronics
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 200°C (TJ)
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Rds On (Max) @ Id, Vgs	72mOhm @ 15A, 18V
Power Dissipation (Max)	210W (Tc)
Vgs(th) (Max) @ Id	4.2V @ 1mA
Supplier Device Package	TO-247-4
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Vgs (Max)	+18V, -5V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	721 pF @ 40 V
Qualification	AEC-Q101

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