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IV1D12010O2

  •  IV1D12010O2
  • image of Single Diodes IV1D12010O2
IV1D12010O2
Single Diodes
Inventchip Technology
DIODE SIL CARB
-
Tube
290
1
: 290

1

$10.8200

$10.8200

10

$9.2700

$92.7000

100

$7.7300

$773.0000

500

$6.8200

$3,410.0000

1000

$6.1400

$6,140.0000

Obtain quotation information
IV1D12010O2
瞻芯-IVCT
SiC SBD
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrInventchip Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F575pF @ 1V, 1MHz
Current - Average Rectified (Io)28A
Supplier Device PackageTO-220-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr50 µA @ 1200 V
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