ICE19N60L Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 6100

3000

$2.4800

$7,440.0000

9000

$2.3200

$20,880.0000

15000

$2.1200

$31,800.0000

21000

$1.9400

$40,740.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	IceMOS Technology
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	4-PowerTSFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Rds On (Max) @ Id, Vgs	220mOhm @ 9.5A, 10V
Power Dissipation (Max)	236W (Tc)
Vgs(th) (Max) @ Id	3.9V @ 250µA
Supplier Device Package	4-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2064 pF @ 25 V

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