AS2M040120P Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 150

$20.6900

$18.3900

$183.9000

100

$16.0800

$1,608.0000

500

$13.7200

$6,860.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Anbon Semiconductor
Series	-
Package	Bulk
Product Status	ACTIVE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Rds On (Max) @ Id, Vgs	55mOhm @ 40A, 20V
Power Dissipation (Max)	330W (Tc)
Vgs(th) (Max) @ Id	4V @ 10mA
Supplier Device Package	TO-247-3
Drive Voltage (Max Rds On, Min Rds On)	20V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	142 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	2946 pF @ 1000 V

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