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2SC5820WU-TL-E

  •  2SC5820WU-TL-E
  • image of Bipolar RF Transistors 2SC5820WU-TL-E
2SC5820WU-TL-E
Bipolar RF Transistors
Intersil (Renesas Electronics Corporation)
SMALL SIGNAL BI
-
Bulk
3100
1
: 3100

1159

$0.2600

$301.3400

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2SC5820WU-TL-E
瑞萨-Renesas
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
Product parameters
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TYPEDESCRIPTION
MfrIntersil (Renesas Electronics Corporation)
Series-
PackageBulk
Product StatusACTIVE
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain17.5dB
Power - Max100mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)4V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 20mA, 2V
Frequency - Transition20GHz
Noise Figure (dB Typ @ f)1.15dB @ 1.8GHz
Supplier Device PackageCMPAK-4
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