• image of 整流二极管阵列>MBR60020CTR
  • image of 整流二极管阵列>MBR60020CTR
MBR60020CTR
Rectifier Diode Array
GeneSiC Semiconductor
Schottky Rectif
-
Twin Tower
YES

captcha
image of 整流二极管阵列>MBR60020CTR
image of 整流二极管阵列>MBR60020CTR
MBR60020CTR
Rectifier Diode Array
GeneSiC Semiconductor
Schottky Rectif
-
Twin Tower
YES
TYPEDESCRIPTION
Lifecycle Status PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time 6 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Number of Elements 2
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 20V
Voltage - Forward (Vf) (Max) @ If 750mV @ 300A
Forward Current 600A
Max Reverse Leakage Current 1μA
Max Surge Current 4kA
Output Current-Max 300A
Application POWER
Current - Average Rectified (Io) 300A
Max Reverse Voltage (DC) 20V
Average Rectified Current 600A
Number of Phases 1
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 20V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
1.jpg
 Orignal genuine       Each chip comes from the original factory


2.jpg
       

 Main products       Only make original stock


3.jpg
        

 Spot inventory       Only make original stock

4.jpg       

Original stockBom DistributioAffordable Price


+86-13723477211

sales@fuchaoic.com
0