• image of 单个绝缘栅双极晶体管>IXGH40N120C3D1
  • image of 单个绝缘栅双极晶体管>IXGH40N120C3D1
IXGH40N120C3D1
单个绝缘栅双极晶体管
IXYS
IXGH40N120C3D1
-
TO-247-3
YES

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image of 单个绝缘栅双极晶体管>IXGH40N120C3D1
image of 单个绝缘栅双极晶体管>IXGH40N120C3D1
IXGH40N120C3D1
单个绝缘栅双极晶体管
IXYS
IXGH40N120C3D1
-
TO-247-3
YES
TYPEDESCRIPTION
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Supplier Device Package TO-247AD (IXGH)
Number of Terminals 3
Transistor Element Material SILICON
Mounting Style Through Hole
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 55 C
Manufacturer IXYS
Brand IXYS
Tradename GenX3
RoHS Details
Package Tube
Base Product Number IXGH40
Mfr IXYS
Product Status Active
Package Shape RECTANGULAR
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Additional Feature LOW CONDUCTION LOSS
Subcategory IGBTs
Max Power Dissipation 380W
Technology Si
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*40N120
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 380W
Case Connection COLLECTOR
Input Type Standard
Power - Max 380W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Product Type IGBT Transistors
Collector Emitter Voltage (VCEO) 4.4V
Max Collector Current 75A
Operating Temperature Range - 55 C to + 150 C
Reverse Recovery Time 100ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 75A
Collector Emitter Saturation Voltage 4.4V
Turn On Time 52 ns
Test Condition 600V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4.4V @ 15V, 30A
Collector Current-Max (IC) 75 A
Continuous Collector Current 75A
Turn Off Time-Nom (toff) 475 ns
IGBT Type PT
Collector-Emitter Voltage-Max 1200 V
Gate Charge 142nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 17ns/130ns
Switching Energy 1.8mJ (on), 550μJ (off)
Reverse Recovery Time (trr) 100ns
Product Category IGBT Transistors
Width 5.3 mm
Height 21.46 mm
Length 16.26 mm
RoHS Status ROHS3 Compliant
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