产品
产品
制造商
询价
资讯
资讯
关于我们
关于我们
联系我们
联系我们
产品
光电子(117074)
传感器(48132)
连接器(342863)
成电路或离散式半导体(133041)
集成电路（IC）(319702)
制造商
询价
资讯
关于我们
关于我们 >>
联系我们
联系我们 >>
  • image of 单个绝缘栅双极晶体管>HGTG30N60B3D
  • image of 单个绝缘栅双极晶体管>HGTG30N60B3D
： HGTG30N60B3D
： 单个绝缘栅双极晶体管
： ON Semiconductor
： HGTG30N60B3D da
： -
： TO-247-3
： YES

captcha
image of 单个绝缘栅双极晶体管>HGTG30N60B3D
image of 单个绝缘栅双极晶体管>HGTG30N60B3D
：
HGTG30N60B3D
：
单个绝缘栅双极晶体管
：
ON Semiconductor
：
HGTG30N60B3D da
：
-
：
TO-247-3
：
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 208W
Current Rating 60A
Base Part Number HGTG30N60
Number of Elements 1
Element Configuration Single
Power Dissipation 208W
Input Type Standard
Turn On Delay Time 36 ns
Transistor Application POWER CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 137 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 55 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Turn On Time 56 ns
Test Condition 480V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 365 ns
Gate Charge 170nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 36ns/137ns
Switching Energy 550μJ (on), 680μJ (off)
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
1.jpg
 原装正品       每颗芯片都来自原厂


2.jpg
       

 主要产品       只生厂材料


3.jpg
        

 现货库存       只生产原材料

4.jpg       

原装库存Bom 单价格实惠


+86-13723477211

sales@fuchaoic.com

点击这里给我发消息
0