TYPE | DESCRIPTION |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW CONDUCTION LOSS |
HTS Code | 8541.29.00.95 |
Voltage - Rated DC | 600V |
Max Power Dissipation | 208W |
Current Rating | 60A |
Base Part Number | HGTG30N60 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 208W |
Input Type | Standard |
Turn On Delay Time | 36 ns |
Transistor Application | POWER CONTROL |
Rise Time | 25ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 137 ns |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 60A |
Reverse Recovery Time | 55 ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.45V |
Turn On Time | 56 ns |
Test Condition | 480V, 30A, 3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
Turn Off Time-Nom (toff) | 365 ns |
Gate Charge | 170nC |
Current - Collector Pulsed (Icm) | 220A |
Td (on/off) @ 25°C | 36ns/137ns |
Switching Energy | 550μJ (on), 680μJ (off) |
REACH SVHC | No SVHC |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |