• image of 单个绝缘栅双极晶体管>HGTD3N60B3
  • image of 单个绝缘栅双极晶体管>HGTD3N60B3
HGTD3N60B3
单个绝缘栅双极晶体管
Harris Corporation
HGTD3N60B3 data
-
TO-251-3 Short Leads, IPak, TO-251AA
YES

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image of 单个绝缘栅双极晶体管>HGTD3N60B3
image of 单个绝缘栅双极晶体管>HGTD3N60B3
HGTD3N60B3
单个绝缘栅双极晶体管
Harris Corporation
HGTD3N60B3 data
-
TO-251-3 Short Leads, IPak, TO-251AA
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Supplier Device Package I-PAK
Number of Terminals 3
Transistor Element Material SILICON
Mfr Harris Corporation
Package Bulk
Product Status Active
RoHS Non-Compliant
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Series -
Operating Temperature -55°C ~ 150°C (TJ)
JESD-609 Code e0
Pbfree Code No
Terminal Finish TIN LEAD
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 33.3 W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-251AA
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 7 A
Test Condition 480V, 3.5A, 82Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 3.5A
Collector Current-Max (IC) 7 A
IGBT Type -
Collector-Emitter Voltage-Max 600 V
Gate Charge 21 nC
Current - Collector Pulsed (Icm) 20 A
Td (on/off) @ 25°C 18ns/105ns
Switching Energy 66μJ (on), 88μJ (off)
Reverse Recovery Time (trr) 16 ns
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