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  • image of 单个绝缘栅双极晶体管>HGT1S12N60C3D
  • image of 单个绝缘栅双极晶体管>HGT1S12N60C3D
： HGT1S12N60C3D
： 单个绝缘栅双极晶体管
： Harris Corporation
： HGT1S12N60C3D d
： -
： TO-262-3 Long Leads, I2Pak, TO-262AA
： YES

captcha
image of 单个绝缘栅双极晶体管>HGT1S12N60C3D
image of 单个绝缘栅双极晶体管>HGT1S12N60C3D
：
HGT1S12N60C3D
：
单个绝缘栅双极晶体管
：
Harris Corporation
：
HGT1S12N60C3D d
：
-
：
TO-262-3 Long Leads, I2Pak, TO-262AA
：
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Supplier Device Package I2PAK (TO-262)
Number of Terminals 3
Transistor Element Material SILICON
Mfr Harris Corporation
Package Bulk
Product Status Active
RoHS Non-Compliant
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Series -
Operating Temperature -40°C ~ 150°C (TJ)
JESD-609 Code e0
Pbfree Code No
Terminal Finish TIN LEAD
Additional Feature LOW CONDUCTION LOSS, HYPER FAST RECOVERY
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 104 W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-262AA
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 24 A
Test Condition -
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Collector Current-Max (IC) 24 A
IGBT Type -
Collector-Emitter Voltage-Max 600 V
Gate Charge 62 nC
Current - Collector Pulsed (Icm) 96 A
Td (on/off) @ 25°C -
Switching Energy -
Reverse Recovery Time (trr) 40 ns
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