• image of 绝缘栅双极晶体管模块>DF1000R17IE4BOSA1
  • image of 绝缘栅双极晶体管模块>DF1000R17IE4BOSA1
DF1000R17IE4BOSA1
绝缘栅双极晶体管模块
Infineon Technologies
DF1000R17IE4BOS
-
Module
YES

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image of 绝缘栅双极晶体管模块>DF1000R17IE4BOSA1
image of 绝缘栅双极晶体管模块>DF1000R17IE4BOSA1
DF1000R17IE4BOSA1
绝缘栅双极晶体管模块
Infineon Technologies
DF1000R17IE4BOS
-
Module
YES
TYPEDESCRIPTION
Factory Lead Time 50 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Max Power Dissipation 6.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 6250W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 1.39kA
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1000A
Turn Off Time-Nom (toff) 1890 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 81nF @ 25V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
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 原装正品       每颗芯片都来自原厂


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 主要产品       只生厂材料


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 现货库存       只生产原材料

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