• image of 射频金属氧化物半导体场效应晶体管>STAC2932F
  • image of 射频金属氧化物半导体场效应晶体管>STAC2932F
STAC2932F
RF MOSFETs Transistors
STMicroelectronics
STAC2932F datas
-
STAC244F
YES

captcha
image of 射频金属氧化物半导体场效应晶体管>STAC2932F
image of 射频金属氧化物半导体场效应晶体管>STAC2932F
STAC2932F
RF MOSFETs Transistors
STMicroelectronics
STAC2932F datas
-
STAC244F
YES
TYPEDESCRIPTION
Package / Case STAC244F
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Packaging Tray
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 125V
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 40A
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STAC293
Pin Count 4
Qualification Status Not Qualified
Operating Temperature (Max) 200°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 250mA
Transistor Application AMPLIFIER
Transistor Type N-Channel
Gain 20dB
DS Breakdown Voltage-Min 125V
Power - Output 390W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 625W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
1.jpg
 原装正品       每颗芯片都来自原厂


2.jpg
       

 主要产品       只生厂材料


3.jpg
        

 现货库存       只生产原材料

4.jpg       

原装库存Bom 单价格实惠


+86-13723477211

sales@fuchaoic.com

点击这里给我发消息
0