• image of 射频金属氧化物半导体场效应晶体管>PD55008
  • image of 射频金属氧化物半导体场效应晶体管>PD55008
PD55008
RF MOSFETs Transistors
STMicroelectronics
PD55008 datashe
-
PowerSO-10 Exposed Bottom Pad
YES

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image of 射频金属氧化物半导体场效应晶体管>PD55008
image of 射频金属氧化物半导体场效应晶体管>PD55008
PD55008
RF MOSFETs Transistors
STMicroelectronics
PD55008 datashe
-
PowerSO-10 Exposed Bottom Pad
YES
TYPEDESCRIPTION
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Max Power Dissipation 52.8W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 4A
Frequency 500MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD55008
Pin Count 10
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52.8W
Case Connection SOURCE
Current - Test 150mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Gain 17dB
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 40V
Power - Output 8W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
RoHS Status ROHS3 Compliant
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