• image of 射频金属氧化物半导体场效应晶体管>MWT-LN600
  • image of 射频金属氧化物半导体场效应晶体管>MWT-LN600
MWT-LN600
RF MOSFETs Transistors
Microwave Technology Inc.
MWT-LN600 datas
-
Die
YES

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image of 射频金属氧化物半导体场效应晶体管>MWT-LN600
image of 射频金属氧化物半导体场效应晶体管>MWT-LN600
MWT-LN600
RF MOSFETs Transistors
Microwave Technology Inc.
MWT-LN600 datas
-
Die
YES
TYPEDESCRIPTION
Package / Case Die
Supplier Device Package Die
Mounting Style -
Mfr Microwave Technology Inc.
Package Case
Product Status Active
Transistor Polarity -
Maximum Operating Temperature + 150 C
Minimum Operating Temperature -
Series -
Voltage - Rated 5.5 V
Current Rating (Amps) -
Technology GaAs
Frequency 26GHz
Operating Frequency 26 GHz
Output Power 20 dBm
Current - Test 100 mA
Transistor Type pHEMT FET
Gain 12dB
Power - Output 20dBm
Noise Figure 0.5dB @ 12GHz
Voltage - Test 3 V
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