• image of 射频金属氧化物半导体场效应晶体管>MWT-LN300
  • image of 射频金属氧化物半导体场效应晶体管>MWT-LN300
MWT-LN300
RF MOSFETs Transistors
Microwave Technology Inc.
MWT-LN300 datas
-
Die
YES

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image of 射频金属氧化物半导体场效应晶体管>MWT-LN300
image of 射频金属氧化物半导体场效应晶体管>MWT-LN300
MWT-LN300
RF MOSFETs Transistors
Microwave Technology Inc.
MWT-LN300 datas
-
Die
YES
TYPEDESCRIPTION
Package / Case Die
Supplier Device Package Die
Mounting Style -
Mfr Microwave Technology Inc.
Package Case
Product Status Active
Transistor Polarity -
Maximum Operating Temperature + 150 C
Minimum Operating Temperature -
Series -
Voltage - Rated 4 V
Current Rating (Amps) -
Technology GaAs
Frequency 26GHz
Operating Frequency 26 GHz
Output Power 16 dBm
Current - Test 25 mA
Transistor Type pHEMT FET
Gain 10dB
Power - Output -
Noise Figure 0.6dB
Voltage - Test 2.5 V
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