• image of 射频金属氧化物半导体场效应晶体管>MRF6VP2600HR5
  • image of 射频金属氧化物半导体场效应晶体管>MRF6VP2600HR5
MRF6VP2600HR5
RF MOSFETs Transistors
NXP USA Inc.
MRF6VP2600HR5 d
-
NI-1230
YES

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image of 射频金属氧化物半导体场效应晶体管>MRF6VP2600HR5
image of 射频金属氧化物半导体场效应晶体管>MRF6VP2600HR5
MRF6VP2600HR5
RF MOSFETs Transistors
NXP USA Inc.
MRF6VP2600HR5 d
-
NI-1230
YES
TYPEDESCRIPTION
Factory Lead Time 10 Weeks
Package / Case NI-1230
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated 110V
HTS Code 8541.29.00.75
Frequency 225MHz
Base Part Number MRF6VP2600
Current - Test 2.6A
Transistor Type LDMOS (Dual)
Gain 25dB
Power - Output 125W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
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