• image of 射频金属氧化物半导体场效应晶体管>MRF6V12250HSR3
  • image of 射频金属氧化物半导体场效应晶体管>MRF6V12250HSR3
MRF6V12250HSR3
RF MOSFETs Transistors
NXP USA Inc.
MRF6V12250HSR3
-
NI-780S
YES

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image of 射频金属氧化物半导体场效应晶体管>MRF6V12250HSR3
image of 射频金属氧化物半导体场效应晶体管>MRF6V12250HSR3
MRF6V12250HSR3
RF MOSFETs Transistors
NXP USA Inc.
MRF6V12250HSR3
-
NI-780S
YES
TYPEDESCRIPTION
Package / Case NI-780S
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 100V
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form FLAT
Frequency 1.03GHz
Base Part Number MRF6V12250
JESD-30 Code R-CDFP-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 100mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 20.3dB
DS Breakdown Voltage-Min 110V
Power - Output 275W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
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