• image of 射频金属氧化物半导体场效应晶体管>BLL8H1214L-500U
  • image of 射频金属氧化物半导体场效应晶体管>BLL8H1214L-500U
BLL8H1214L-500U
RF MOSFETs Transistors
Ampleon USA Inc.
BLL8H1214L-500U
-
SOT539A
YES

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image of 射频金属氧化物半导体场效应晶体管>BLL8H1214L-500U
image of 射频金属氧化物半导体场效应晶体管>BLL8H1214L-500U
BLL8H1214L-500U
RF MOSFETs Transistors
Ampleon USA Inc.
BLL8H1214L-500U
-
SOT539A
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Package / Case SOT539A
Supplier Device Package SOT539A
Packaging Tray
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 100V
Frequency 1.2GHz~1.4GHz
Current - Test 150mA
Transistor Type LDMOS (Dual), Common Source
Gain 17dB
Power - Output 500W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
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