• image of 射频金属氧化物半导体场效应晶体管>BLF7G20L-90P,112
  • image of 射频金属氧化物半导体场效应晶体管>BLF7G20L-90P,112
BLF7G20L-90P,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF7G20L-90P,11
-
SOT-1121A
YES

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image of 射频金属氧化物半导体场效应晶体管>BLF7G20L-90P,112
image of 射频金属氧化物半导体场效应晶体管>BLF7G20L-90P,112
BLF7G20L-90P,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF7G20L-90P,11
-
SOT-1121A
YES
TYPEDESCRIPTION
Package / Case SOT-1121A
Surface Mount YES
Transistor Element Material SILICON
Packaging Tube
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 18A
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 1.81GHz~1.88GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF7G20
Reference Standard IEC-60134
JESD-30 Code R-CDFM-F4
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Current - Test 550mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual), Common Source
Gain 19.5dB
Drain Current-Max (Abs) (ID) 18A
DS Breakdown Voltage-Min 65V
Power - Output 40W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status Non-RoHS Compliant
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