• image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-200R,112
  • image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-200R,112
BLF6G10LS-200R,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF6G10LS-200R,
-
SOT-502B
YES

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image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-200R,112
image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-200R,112
BLF6G10LS-200R,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF6G10LS-200R,
-
SOT-502B
YES
TYPEDESCRIPTION
Package / Case SOT-502B
Supplier Device Package SOT502B
Packaging Tray
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 65V
Current Rating (Amps) 49A
Base Part Number BLF6G10
Current - Test 1.4A
Transistor Type LDMOS
Power - Output 40W
Voltage - Test 28V
RoHS Status Non-RoHS Compliant
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 原装正品       每颗芯片都来自原厂


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 主要产品       只生厂材料


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 现货库存       只生产原材料

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原装库存Bom 单价格实惠


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