• image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-135R,118
  • image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-135R,118
BLF6G10LS-135R,118
RF MOSFETs Transistors
Ampleon USA Inc.
BLF6G10LS-135R,
-
SOT-502B
YES

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image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-135R,118
image of 射频金属氧化物半导体场效应晶体管>BLF6G10LS-135R,118
BLF6G10LS-135R,118
RF MOSFETs Transistors
Ampleon USA Inc.
BLF6G10LS-135R,
-
SOT-502B
YES
TYPEDESCRIPTION
Package / Case SOT-502B
Supplier Device Package SOT502B
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 65V
Current Rating (Amps) 32A
Frequency 871.5MHz~891.5MHz
Base Part Number BLF6G10
Current - Test 950mA
Transistor Type LDMOS
Gain 21dB
Power - Output 26.5W
Voltage - Test 28V
RoHS Status Non-RoHS Compliant
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