• image of 射频金属氧化物半导体场效应晶体管>BLF174XR,112
  • image of 射频金属氧化物半导体场效应晶体管>BLF174XR,112
BLF174XR,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF174XR,112 da
-
SOT-1214A
YES

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image of 射频金属氧化物半导体场效应晶体管>BLF174XR,112
image of 射频金属氧化物半导体场效应晶体管>BLF174XR,112
BLF174XR,112
RF MOSFETs Transistors
Ampleon USA Inc.
BLF174XR,112 da
-
SOT-1214A
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Package / Case SOT-1214A
Supplier Device Package SOT1214A
Packaging Tray
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated 110V
Frequency 108MHz
Current - Test 100mA
Transistor Type LDMOS (Dual), Common Source
Gain 28.5dB
Power - Output 600W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
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 原装正品       每颗芯片都来自原厂


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 主要产品       只生厂材料


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 现货库存       只生产原材料

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原装库存Bom 单价格实惠


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