: | A3G26D055NT4 |
---|---|
: | 射频金属氧化物半导体场效应晶体管 |
: | NXP USA Inc. |
: | A3G26D055NT4 da |
: | - |
: | 6-LDFN Exposed Pad |
: | YES |
TYPE | DESCRIPTION |
Package / Case | 6-LDFN Exposed Pad |
Supplier Device Package | 6-PDFN (7x6.5) |
Mounting Style | SMD/SMT |
Mfr | NXP USA Inc. |
Package | Digi-Reel? |
Product Status | Active |
RoHS | Details |
Brand | NXP Semiconductors |
Manufacturer | NXP |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Transistor Polarity | Dual N-Channel |
Series | - |
Packaging | Cut Tape |
Type | RF Power MOSFET |
Voltage - Rated | 125 V |
Subcategory | MOSFETs |
Current Rating (Amps) | - |
Technology | GaN Si |
Frequency | 100MHz ~ 2.69GHz |
Operating Frequency | 100 MHz to 2690 MHz |
Number of Channels | 2 Channel |
Output Power | 8 W |
Current - Test | 40 mA |
Product Type | RF MOSFET Transistors |
Transistor Type | GaN |
Gain | 13.9dB |
Power - Output | 8W |
Noise Figure | - |
Voltage - Test | 48 V |
Product Category | RF MOSFET Transistors |
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原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |