• image of 射频金属氧化物半导体场效应晶体管>2SK3074(TE12L)
  • image of 射频金属氧化物半导体场效应晶体管>2SK3074(TE12L)
2SK3074(TE12L)
RF MOSFETs Transistors
Toshiba
2SK3074(TE12L)
-
-
YES

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image of 射频金属氧化物半导体场效应晶体管>2SK3074(TE12L)
image of 射频金属氧化物半导体场效应晶体管>2SK3074(TE12L)
2SK3074(TE12L)
RF MOSFETs Transistors
Toshiba
2SK3074(TE12L)
-
-
YES
TYPEDESCRIPTION
Material Si
ECCN (US) EAR99
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Voltage (V) 25
Maximum Continuous Drain Current (A) 1
Maximum Power Dissipation (mW) 3000
Output Power (W) 0.63(Min)
Typical Power Gain (dB) 14.9(Min)
Typical Drain Efficiency (%) 45(Min)
Minimum Operating Temperature (°C) -45
Maximum Operating Temperature (°C) 150
Automotive No
Supplier Package PW-Mini
Military No
Mounting Surface Mount
Package Height 1.6(Max)
Package Length 4.6(Max)
Package Width 2.5
PCB changed 3
Tab Tab
Packaging Tape and Reel
Part Status Obsolete
Pin Count 4
Configuration Single Dual Source
Channel Type N
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