TYPE | DESCRIPTION |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Digi-Reel® |
Series | TrenchFET® |
Published | 2015 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Max Power Dissipation | 100W |
Base Part Number | SIZ910 |
Pin Count | 8 |
JESD-30 Code | R-PDSO-N6 |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN SOURCE |
Power - Max | 48W 100W |
FET Type | 2 N-Channel (Half Bridge) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Rise Time | 35ns |
Drain to Source Voltage (Vdss) | 30V |
Fall Time (Typ) | 12 ns |
Continuous Drain Current (ID) | 40A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0075Ohm |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 100A |
Avalanche Energy Rating (Eas) | 31 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 750μm |
Length | 6mm |
Width | 5mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |