: | SI9945BDY-T1-GE3 |
---|---|
: | 金属氧化物半导体场效应晶体管阵列 |
: | Vishay Siliconix |
: | SI9945BDY-T1-GE |
: | - |
: | 8-SOIC (0.154, 3.90mm Width) |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 14 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Weight | 186.993455mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | TrenchFET® |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 58mOhm |
Terminal Finish | Matte Tin (Sn) |
Max Power Dissipation | 3.1W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | SI9945 |
Pin Count | 8 |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Turn On Delay Time | 10 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 58m Ω @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Rise Time | 15ns |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 4.3A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 5.3A |
Drain to Source Breakdown Voltage | 60V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | 2.5 V |
Height | 1.75mm |
Length | 5mm |
Width | 4mm |
REACH SVHC | No SVHC |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
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原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |