• image of 金属氧化物半导体场效应晶体管阵列>FDS8958A-F085
  • image of 金属氧化物半导体场效应晶体管阵列>FDS8958A-F085
FDS8958A-F085
MOSFETs Transistors Arrays
ON Semiconductor
FDS8958A-F085 d
-
8-SOIC (0.154, 3.90mm Width)
YES

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image of 金属氧化物半导体场效应晶体管阵列>FDS8958A-F085
image of 金属氧化物半导体场效应晶体管阵列>FDS8958A-F085
FDS8958A-F085
MOSFETs Transistors Arrays
ON Semiconductor
FDS8958A-F085 d
-
8-SOIC (0.154, 3.90mm Width)
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A 5A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 54 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2W
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
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