• image of 金属氧化物半导体场效应晶体管阵列>FDG6304P-F169
  • image of 金属氧化物半导体场效应晶体管阵列>FDG6304P-F169
FDG6304P-F169
金属氧化物半导体场效应晶体管阵列
ON Semiconductor
FDG6304P-F169 d
-
6-TSSOP, SC-88, SOT-363
YES

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image of 金属氧化物半导体场效应晶体管阵列>FDG6304P-F169
image of 金属氧化物半导体场效应晶体管阵列>FDG6304P-F169
FDG6304P-F169
金属氧化物半导体场效应晶体管阵列
ON Semiconductor
FDG6304P-F169 d
-
6-TSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature -55°C~150°C TJ
Published 1999
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Power - Max 300mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 1.1 Ω @ 410mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 10V
Current - Continuous Drain (Id) @ 25°C 410mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
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