TYPE | DESCRIPTION |
Factory Lead Time | 16 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Weight | 3.005049mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Max Power Dissipation | 400mW |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | DMN32D2LV |
Pin Count | 6 |
JESD-30 Code | R-PDSO-F6 |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.2 Ω @ 100mA, 4V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 39pF @ 3V |
Drain to Source Voltage (Vdss) | 30V |
Continuous Drain Current (ID) | 400mA |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 0.4A |
Drain to Source Breakdown Voltage | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 600μm |
Length | 1.6mm |
Width | 1.2mm |
REACH SVHC | No SVHC |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |