• image of 金属氧化物半导体场效应晶体管阵列>APTM08TDUM04PG
  • image of 金属氧化物半导体场效应晶体管阵列>APTM08TDUM04PG
APTM08TDUM04PG
金属氧化物半导体场效应晶体管阵列
Microsemi Corporation
APTM08TDUM04PG
-
SP6
YES

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image of 金属氧化物半导体场效应晶体管阵列>APTM08TDUM04PG
image of 金属氧化物半导体场效应晶体管阵列>APTM08TDUM04PG
APTM08TDUM04PG
金属氧化物半导体场效应晶体管阵列
Microsemi Corporation
APTM08TDUM04PG
-
SP6
YES
TYPEDESCRIPTION
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 138W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Qualification Status Not Qualified
Number of Elements 6
Configuration 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 138W
Case Connection ISOLATED
FET Type 6 N-Channel (3-Phase Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Drain to Source Voltage (Vdss) 75V
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.0045Ohm
Pulsed Drain Current-Max (IDM) 250A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 1500 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status RoHS Compliant
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