: | PDTD123ET,215 |
---|---|
: | 预偏置双极性结型晶体管 |
: | Nexperia USA Inc. |
: | PDTD123ET,215 d |
: | - |
: | TO-236-3, SC-59, SOT-23-3 |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 4 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 |
Max Power Dissipation | 250mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | PDTD123 |
Pin Count | 3 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 250mW |
Transistor Application | SWITCHING |
Transistor Type | NPN - Pre-Biased |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA 5V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Collector Emitter Breakdown Voltage | 50V |
Max Breakdown Voltage | 50V |
Emitter Base Voltage (VEBO) | 10V |
hFE Min | 40 |
Resistor - Base (R1) | 2.2 k Ω |
Resistor - Emitter Base (R2) | 2.2 k Ω |
REACH SVHC | No SVHC |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
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原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |