• image of 预偏置双极性结型晶体管>NSVMUN2233T1G
  • image of 预偏置双极性结型晶体管>NSVMUN2233T1G
NSVMUN2233T1G
预偏置双极性结型晶体管
ON Semiconductor
NSVMUN2233T1G d
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 预偏置双极性结型晶体管>NSVMUN2233T1G
image of 预偏置双极性结型晶体管>NSVMUN2233T1G
NSVMUN2233T1G
预偏置双极性结型晶体管
ON Semiconductor
NSVMUN2233T1G d
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Max Power Dissipation 230mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number MUN2233
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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