: | MUN2211T3 |
---|---|
: | 预偏置双极性结型晶体管 |
: | ON Semiconductor |
: | MUN2211T3 datas |
: | - |
: | TO-236-3, SC-59, SOT-23-3 |
: | YES |
TYPE | DESCRIPTION |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
HTS Code | 8541.21.00.95 |
Voltage - Rated DC | 50V |
Max Power Dissipation | 338mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 100mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | MUN2211 |
Pin Count | 3 |
JESD-30 Code | R-PDSO-G3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 230mW |
Transistor Application | SWITCHING |
Transistor Type | NPN - Pre-Biased |
Collector Emitter Voltage (VCEO) | 250mV |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA 10V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Collector Emitter Breakdown Voltage | 50V |
hFE Min | 35 |
Resistor - Base (R1) | 10 k Ω |
Continuous Collector Current | 100mA |
Resistor - Emitter Base (R2) | 10 k Ω |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
![]() | |
原装正品 | 每颗芯片都来自原厂 |
| |
主要产品 | 只生厂材料 |
| |
现货库存 | 只生产原材料 |
|
原装库存 | Bom 单 | 价格实惠 |