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  • image of 预偏置双极性结型晶体管>MUN2211T3
  • image of 预偏置双极性结型晶体管>MUN2211T3
： MUN2211T3
： 预偏置双极性结型晶体管
： ON Semiconductor
： MUN2211T3 datas
： -
： TO-236-3, SC-59, SOT-23-3
： YES

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image of 预偏置双极性结型晶体管>MUN2211T3
image of 预偏置双极性结型晶体管>MUN2211T3
：
MUN2211T3
：
预偏置双极性结型晶体管
：
ON Semiconductor
：
MUN2211T3 datas
：
-
：
TO-236-3, SC-59, SOT-23-3
：
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Voltage - Rated DC 50V
Max Power Dissipation 338mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MUN2211
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 230mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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