: | RN1962FE(TE85L,F) |
---|---|
: | BJT Transistors Arrays |
: | Toshiba Semiconductor and Storage |
: | RN1962FE(TE85L, |
: | - |
: | SOT-563, SOT-666 |
: | YES |
TYPE | DESCRIPTION |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Transistor Element Material | SILICON |
Packaging | Cut Tape (CT) |
Published | 2014 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Power Dissipation | 100mW |
Reach Compliance Code | unknown |
Number of Elements | 2 |
Polarity | NPN |
Element Configuration | Dual |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Collector Emitter Voltage (VCEO) | 300mV |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 5V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Collector Emitter Breakdown Voltage | 50V |
Max Breakdown Voltage | 50V |
Frequency - Transition | 250MHz |
Emitter Base Voltage (VEBO) | 10V |
hFE Min | 50 |
Resistor - Base (R1) | 10k Ω |
Continuous Collector Current | 100mA |
Resistor - Emitter Base (R2) | 10k Ω |
RoHS Status | RoHS Compliant |
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原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |