• image of 内存模块>MT4VDDT3264HY-40BJ1
  • image of 内存模块>MT4VDDT3264HY-40BJ1
MT4VDDT3264HY-40BJ1
Memory Modules
Micron Technology Inc.
MT4VDDT3264HY-4
-
200-SODIMM
YES

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image of 内存模块>MT4VDDT3264HY-40BJ1
image of 内存模块>MT4VDDT3264HY-40BJ1
MT4VDDT3264HY-40BJ1
Memory Modules
Micron Technology Inc.
MT4VDDT3264HY-4
-
200-SODIMM
YES
TYPEDESCRIPTION
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Published 2003
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 200
ECCN Code EAR99
Terminal Finish GOLD
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature AUTO/SELF REFRESH; WD-MAX
Subcategory DRAMs
Technology CMOS
Terminal Position ZIG-ZAG
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 2.6V
Terminal Pitch 0.6mm
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 200
Operating Supply Voltage 2.6V
Number of Elements 4
Temperature Grade COMMERCIAL
Max Supply Voltage 2.7V
Min Supply Voltage 2.5V
Memory Size 256MB
Number of Ports 1
Speed 400MT/s
Memory Type DDR SDRAM
Supply Current-Max 1.92mA
Access Time 900 ns
Data Bus Width 64b
Output Characteristics 3-STATE
Memory Width 64
Max Frequency 400MHz
I/O Type COMMON
Refresh Cycles 8192
Height Seated (Max) 31.9mm
Length 67.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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