• image of 内存模块>MT16HTS25664HY-667A1
  • image of 内存模块>MT16HTS25664HY-667A1
MT16HTS25664HY-667A1
Memory Modules
Micron Technology Inc.
MT16HTS25664HY-
-
200-SODIMM
YES

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image of 内存模块>MT16HTS25664HY-667A1
image of 内存模块>MT16HTS25664HY-667A1
MT16HTS25664HY-667A1
Memory Modules
Micron Technology Inc.
MT16HTS25664HY-
-
200-SODIMM
YES
TYPEDESCRIPTION
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Packaging Bulk
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 200
Terminal Finish MATTE TIN
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Supply Voltage 1.8V
Terminal Pitch 0.6mm
Time@Peak Reflow Temperature-Max (s) 30
Operating Supply Voltage 1.8V
Number of Elements 16
Temperature Grade COMMERCIAL
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Memory Size 2GB
Speed 667MT/s
Memory Type DDR2 SDRAM
Clock Frequency 333MHz
Supply Current-Max 2.336mA
Data Bus Width 64b
Organization 256MX64
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.112A
Memory Density 17179869184 bit
Max Frequency 667MHz
I/O Type COMMON
Refresh Cycles 8192
Height 30mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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