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TC58BVG2S0HBAI4
Memory
Kioxia America, Inc.
Benand™ M
-
63-VFBGA
YES

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image of 存储器>TC58BVG2S0HBAI4
image of 存储器>TC58BVG2S0HBAI4
TC58BVG2S0HBAI4
Memory
Kioxia America, Inc.
Benand™ M
-
63-VFBGA
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case 63-VFBGA
Surface Mount YES
Operating Temperature -40°C~85°C TA
Packaging Tray
Series Benand™
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 63
Technology FLASH - NAND (SLC)
Voltage - Supply 2.7V~3.6V
Terminal Position BOTTOM
Number of Functions 1
Supply Voltage 3.3V
Terminal Pitch 0.8mm
JESD-30 Code R-PBGA-B63
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 4Gb 512M x 8
Memory Type Non-Volatile
Operating Mode ASYNCHRONOUS
Memory Format FLASH
Memory Interface Parallel
Organization 512MX8
Memory Width 8
Write Cycle Time - Word, Page 25ns
Memory Density 4294967296 bit
Programming Voltage 3.3V
Length 11mm
Height Seated (Max) 1mm
Width 9mm
RoHS Status RoHS Compliant
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