• image of 结型场效应管晶体管>SMMBFJ175LT1G
  • image of 结型场效应管晶体管>SMMBFJ175LT1G
SMMBFJ175LT1G
JFETs Transistors
ON Semiconductor
SMMBFJ175LT1G d
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 结型场效应管晶体管>SMMBFJ175LT1G
image of 结型场效应管晶体管>SMMBFJ175LT1G
SMMBFJ175LT1G
JFETs Transistors
ON Semiconductor
SMMBFJ175LT1G d
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 2 weeks ago)
Factory Lead Time 40 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V VGS
Drain Current-Max (Abs) (ID) 0.06A
Drain-source On Resistance-Max 125Ohm
FET Technology JUNCTION
Feedback Cap-Max (Crss) 5.5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 7mA @ 15V
Voltage - Cutoff (VGS off) @ Id 3V @ 10nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 125Ohm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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