• image of 结型场效应管晶体管>MMBF5460
  • image of 结型场效应管晶体管>MMBF5460
MMBF5460
JFETs Transistors
ON Semiconductor
MMBF5460 datash
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 结型场效应管晶体管>MMBF5460
image of 结型场效应管晶体管>MMBF5460
MMBF5460
JFETs Transistors
ON Semiconductor
MMBF5460 datash
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Voltage - Rated DC -40V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -10mA
Base Part Number MBF5460
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 225mW
FET Type P-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Drain to Source Voltage (Vdss) 40V
Continuous Drain Current (ID) -5mA
Gate to Source Voltage (Vgs) 40V
FET Technology JUNCTION
Feedback Cap-Max (Crss) 2 pF
Current - Drain (Idss) @ Vds (Vgs=0) 1mA @ 15V
Voltage - Cutoff (VGS off) @ Id 750mV @ 1μA
Height 930μm
Length 2.92mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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