• image of 结型场效应管晶体管>MMBF4393LT1G
  • image of 结型场效应管晶体管>MMBF4393LT1G
MMBF4393LT1G
JFETs Transistors
ON Semiconductor
MMBF4393LT1G da
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 结型场效应管晶体管>MMBF4393LT1G
image of 结型场效应管晶体管>MMBF4393LT1G
MMBF4393LT1G
JFETs Transistors
ON Semiconductor
MMBF4393LT1G da
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 100Ohm
HTS Code 8541.21.00.95
Voltage - Rated DC 30V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBF4393
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 225mW
FET Type N-Channel
Transistor Application SWITCHING
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14pF @ 15V
Breakdown Voltage -30V
Continuous Drain Current (ID) 1μA
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 30V
FET Technology JUNCTION
Drain to Source Resistance 100Ohm
Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA
Resistance - RDS(On) 100Ohm
Height 1.016mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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