• image of 单个绝缘栅双极晶体管>IXGH17N100AU1
  • image of 单个绝缘栅双极晶体管>IXGH17N100AU1
IXGH17N100AU1
Single IGBTs
IXYS
IXGH17N100AU1 d
-
TO-247-3
YES

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image of 单个绝缘栅双极晶体管>IXGH17N100AU1
image of 单个绝缘栅双极晶体管>IXGH17N100AU1
IXGH17N100AU1
Single IGBTs
IXYS
IXGH17N100AU1 d
-
TO-247-3
YES
TYPEDESCRIPTION
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Supplier Device Package TO-247AD (IXGH)
Weight 6.500007g
Number of Terminals 3
Transistor Element Material SILICON
Package Bulk
Base Product Number IXGH17
Mfr IXYS
Product Status Obsolete
Package Shape RECTANGULAR
Manufacturer IXYS Corporation
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series --
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature HIGH SPEED
Voltage - Rated DC 1kV
Max Power Dissipation 150W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Current Rating 34A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*17N100
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 100 ns
Power - Max 150W
Transistor Application POWER CONTROL
Rise Time 200ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 500 ns
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 34A
Reverse Recovery Time 50ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Current - Collector (Ic) (Max) 34A
Power Dissipation-Max (Abs) 150 W
Turn On Time 300 ns
Test Condition 800V, 17A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 17A
Collector Current-Max (IC) 34 A
Turn Off Time-Nom (toff) 1450 ns
IGBT Type --
Collector-Emitter Voltage-Max 1000 V
Gate Charge 100nC
Current - Collector Pulsed (Icm) 68A
Td (on/off) @ 25°C 100ns/500ns
Switching Energy 3mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 4 V
Gate-Emitter Thr Voltage-Max 5V
Reverse Recovery Time (trr) 50ns
Power Dissipation Ambient-Max 150 W
RoHS Status RoHS Compliant
Lead Free Lead Free
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