• image of 单个绝缘栅双极晶体管>FGHL50T65MQDT
  • image of 单个绝缘栅双极晶体管>FGHL50T65MQDT
FGHL50T65MQDT
Single IGBTs
onsemi
FGHL50T65MQDT d
-
TO-247-3
YES

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image of 单个绝缘栅双极晶体管>FGHL50T65MQDT
image of 单个绝缘栅双极晶体管>FGHL50T65MQDT
FGHL50T65MQDT
Single IGBTs
onsemi
FGHL50T65MQDT d
-
TO-247-3
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Mounting Style Through Hole
Mfr onsemi
Package Tube
Product Status Active
Package Type TO-247-3L
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Manufacturer onsemi
Brand onsemi
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Subcategory IGBTs
Technology Si
Configuration Single
Power Dissipation 268W
Input Type Standard
Power - Max 268 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Collector Emitter Saturation Voltage 1.45V
Test Condition 400V, 50A, 6Ohm, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A
Continuous Collector Current 80
IGBT Type Trench Field Stop
Gate Charge 99 nC
Current - Collector Pulsed (Icm) 200 A
Td (on/off) @ 25°C 21ns/90ns
Switching Energy 1.19mJ (on), 630μJ (off)
Reverse Recovery Time (trr) 79 ns
Product Category IGBT Transistors
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 Main products       Only make original stock


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 Spot inventory       Only make original stock

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Original stockBom DistributioAffordable Price


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