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  • image of 绝缘栅双极晶体管模块>APT100GT120JU3
APT100GT120JU3
IGBTs Modules
Microsemi Corporation
APT100GT120JU3
-
ISOTOP
YES

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image of 绝缘栅双极晶体管模块>APT100GT120JU3
image of 绝缘栅双极晶体管模块>APT100GT120JU3
APT100GT120JU3
IGBTs Modules
Microsemi Corporation
APT100GT120JU3
-
ISOTOP
YES
TYPEDESCRIPTION
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOW CONDUCTION LOSS
Max Power Dissipation 480W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 140A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.2nF
Turn On Time 335 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.2nF @ 25V
VCEsat-Max 2.1 V
RoHS Status RoHS Compliant
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