• image of 单金属氧化物半导体场效应晶体管晶体管>TK11A55D(STA4,Q,M)
  • image of 单金属氧化物半导体场效应晶体管晶体管>TK11A55D(STA4,Q,M)
TK11A55D(STA4,Q,M)
Single MOSFETs Transistors
Toshiba Semiconductor and Storage
N-Channel Tube
-
TO-220-3 Full Pack
YES

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image of 单金属氧化物半导体场效应晶体管晶体管>TK11A55D(STA4,Q,M)
image of 单金属氧化物半导体场效应晶体管晶体管>TK11A55D(STA4,Q,M)
TK11A55D(STA4,Q,M)
Single MOSFETs Transistors
Toshiba Semiconductor and Storage
N-Channel Tube
-
TO-220-3 Full Pack
YES
TYPEDESCRIPTION
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Operating Temperature 150°C TJ
Packaging Tube
Series π-MOSVII
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Power Dissipation-Max 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 630mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.35nF
Rds On Max 630 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
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