: | TK11A55D(STA4,Q,M) |
---|---|
: | Single MOSFETs Transistors |
: | Toshiba Semiconductor and Storage |
: | N-Channel Tube |
: | - |
: | TO-220-3 Full Pack |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 16 Weeks |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Supplier Device Package | TO-220SIS |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Series | π-MOSVII |
Published | 2009 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Power Dissipation-Max | 45W Tc |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 630mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 22ns |
Drain to Source Voltage (Vdss) | 550V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 15 ns |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 30V |
Input Capacitance | 1.35nF |
Rds On Max | 630 mΩ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Orignal genuine | Each chip comes from the original factory |
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Main products | Only make original stock |
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Spot inventory | Only make original stock |
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Original stock | Bom Distributio | Affordable Price |