STSJ25NF3LL Single MOSFETs Transistors_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width) Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	10.5mOhm
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	25A
Time@Peak Reflow Temperature-Max (s)	30
Base Part Number	STSJ25
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	70W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	70W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.5m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	33nC @ 4.5V
Rise Time	156ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	12A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	100A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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