• image of 单金属氧化物半导体场效应晶体管晶体管>NTD2955T4
  • image of 单金属氧化物半导体场效应晶体管晶体管>NTD2955T4
NTD2955T4
Single MOSFETs Transistors
ON Semiconductor
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-
YES

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image of 单金属氧化物半导体场效应晶体管晶体管>NTD2955T4
image of 单金属氧化物半导体场效应晶体管晶体管>NTD2955T4
NTD2955T4
Single MOSFETs Transistors
ON Semiconductor
-
-
YES
TYPEDESCRIPTION
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
Package Shape RECTANGULAR
Manufacturer ON Semiconductor
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 12 A
Drain-source On Resistance-Max 0.18 Ω
Pulsed Drain Current-Max (IDM) 36 A
DS Breakdown Voltage-Min 60 V
Avalanche Energy Rating (Eas) 216 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 55 W
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