• image of 单金属氧化物半导体场效应晶体管晶体管>IRLZ34
  • image of 单金属氧化物半导体场效应晶体管晶体管>IRLZ34
IRLZ34
Single MOSFETs Transistors
Vishay Siliconix
N-Channel Tube
-
TO-220-3
YES

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image of 单金属氧化物半导体场效应晶体管晶体管>IRLZ34
image of 单金属氧化物半导体场效应晶体管晶体管>IRLZ34
IRLZ34
Single MOSFETs Transistors
Vishay Siliconix
N-Channel Tube
-
TO-220-3
YES
TYPEDESCRIPTION
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Power Dissipation 88W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50mOhm @ 18A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
Rise Time 170ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 10V
Input Capacitance 1.6nF
Drain to Source Resistance 50mOhm
Rds On Max 50 mΩ
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
RoHS Status Non-RoHS Compliant
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